A predictive model to investigate the effects of gate driver common mode currents in SiC MOSFET based converter

M. Krishna, K. Hatua
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引用次数: 1

Abstract

Though desirable, fast switching speeds of SiC MOSFETs can cause significant common mode currents through the gate driver circuitry. This can deteriorate the signal integrity of the whole converter. The Present paper proposes a predictive model to estimate these common mode currents and the corruption in the signal integrity. Further, the presented model is used to investigate the impact of common mode choke placed at various positions in the gate driver. The predictions of the proposed model are verified both in simulation as well as in the hardware test set up.
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基于SiC MOSFET的变换器中栅极驱动共模电流影响的预测模型
虽然是理想的,但SiC mosfet的快速开关速度可以通过栅极驱动电路产生显着的共模电流。这会降低整个变换器的信号完整性。本文提出了一个预测模型来估计这些共模电流和信号完整性的破坏。此外,该模型还用于研究放置在栅极驱动器中不同位置的共模扼流圈的影响。该模型的预测结果在仿真和硬件测试中都得到了验证。
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