Energy efficient Phase Change Memory based main memory for future high performance systems

Rishiraj A. Bheda, Jason A. Poovey, Jesse G. Beu, T. Conte
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引用次数: 34

Abstract

Phase Change Memory (PCM) has recently attracted a lot of attention as a scalable alternative to DRAM for main memory systems. As the need for high-density memory increases, DRAM has proven to be less attractive from the point of view of scaling and energy consumption. PCM-only memories suffer from latency issues, high write energy, and the problem of limited write endurance. Research in this domain has focused mainly on using various hybrid memory configurations to address these shortcomings. A commodity DRAM module as a cache for PCM memory has emerged as a potential solution. But this method requires use of a separate memory controller and is unable to achieve better performance than a DRAM-only based memory at low energy. We propose a PCM based main memory system design using a small, embedded DRAM (eDRAM) cache to replace the row buffers in the PCM memory chip. This reduces the high latencies of PCM and the energy consumption of the main memory system. Our methodology also eliminates the need for separate memory controllers. Through simulation results, we show competitive performance by reducing average memory access time of a slow PCM based memory and significant energy reductions against a DDR3 commodity DRAM memory system of similar storage size. Our proposed system is highly energy efficient and provides 35.02%improvement in EDP over a DRAM-only system. Our system consumes less energy than the state-of-the-art PCM hybrid system using a commodity DRAM cache.
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面向未来高性能系统的高能效相变存储器为主存储器
相变存储器(PCM)作为一种可扩展的替代DRAM的主存储系统,最近引起了人们的广泛关注。随着对高密度存储器需求的增加,从缩放和能耗的角度来看,DRAM已被证明不那么有吸引力。只有pcm的存储器存在延迟问题、高写入能量和有限写入持久性的问题。该领域的研究主要集中在使用各种混合存储器配置来解决这些缺点。作为PCM存储器缓存的商品DRAM模块已经成为一种潜在的解决方案。但是这种方法需要使用单独的存储器控制器,并且在低能量下无法获得比仅基于dram的存储器更好的性能。我们提出了一种基于PCM的主存系统设计,使用小型嵌入式DRAM (eDRAM)缓存来取代PCM存储芯片中的行缓冲。这减少了PCM的高延迟和主存储器系统的能量消耗。我们的方法还消除了对单独内存控制器的需求。通过模拟结果,我们通过减少基于慢速PCM的存储器的平均存储器访问时间和与类似存储大小的DDR3商品DRAM存储器系统相比显着降低能量来显示具有竞争力的性能。我们提出的系统具有很高的能源效率,与仅使用dram的系统相比,EDP提高35.02%。我们的系统比使用商品DRAM缓存的最先进的PCM混合系统消耗更少的能量。
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