{"title":"5 GHz Power Amplifier Design with AMS 0.35 μm SiGe BiCMOS Technology for IEEE 802.11a WLAN","authors":"C. Kavlak, I. Tekin","doi":"10.1109/SIU.2006.1659888","DOIUrl":null,"url":null,"abstract":"In this work, a 5 GHz radio frequency power amplifier for 802.11a wireless LAN applications has been designed in Austria Micro Systems (AMS) 0.35 mum SiGe BiCMOS (ft=60 GHz) technology. At 5 GHz frequency and 3.3 V supply voltage, output power of 16.364 dBm and power added efficiency (PAE) of 36.819 % are achieved from single discrete SiGe BiCMOS HBT (npn 254H5) with 0.35 mum emitter width. The output 1 dB compression point at 3.3 V is 11.86 dBm with a PAE of 21%","PeriodicalId":415037,"journal":{"name":"2006 IEEE 14th Signal Processing and Communications Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2006-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE 14th Signal Processing and Communications Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIU.2006.1659888","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, a 5 GHz radio frequency power amplifier for 802.11a wireless LAN applications has been designed in Austria Micro Systems (AMS) 0.35 mum SiGe BiCMOS (ft=60 GHz) technology. At 5 GHz frequency and 3.3 V supply voltage, output power of 16.364 dBm and power added efficiency (PAE) of 36.819 % are achieved from single discrete SiGe BiCMOS HBT (npn 254H5) with 0.35 mum emitter width. The output 1 dB compression point at 3.3 V is 11.86 dBm with a PAE of 21%
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