{"title":"A high efficiency fully-monolithic 2-stage C-band GaN power amplifier for 5G microcell applications","authors":"J. Mayeda, D. Lie, J. Lopez","doi":"10.1109/WMCAS.2018.8400623","DOIUrl":null,"url":null,"abstract":"A highly efficient two-stage 6 GHz fully-integrated GaN power amplifier (PA) designed for 5G microcell communication is reported in this work. Post-layout SPICE simulations show this two-stage PA achieves an output 1 dB compression Pout, idb above 33 dBm and greater than 31 dB gain and 34% PAE (power-added efficiency) for CW operation at 6 GHz. When the PA is driven with 5/10/20 MHz LTE 16QAM modulated signals, the simulated output spectra and adjacent channel leakage ratio (ACLR) at 4 dB below Pout, 1db passed the LTE spectrum emission mask (SEM) without any predistortion. Operated at a 28 V supply, this fully monolithic PA achieves reasonable frequency performance and linearity while it did not adopt the Doherty architecture for backoff efficiency enhancement; however, simulations suggest it may deliver good PAE values at power backoff when supply modulation is used to make it competitive for 5G PA microcell applications.","PeriodicalId":254840,"journal":{"name":"2018 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 Texas Symposium on Wireless and Microwave Circuits and Systems (WMCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WMCAS.2018.8400623","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A highly efficient two-stage 6 GHz fully-integrated GaN power amplifier (PA) designed for 5G microcell communication is reported in this work. Post-layout SPICE simulations show this two-stage PA achieves an output 1 dB compression Pout, idb above 33 dBm and greater than 31 dB gain and 34% PAE (power-added efficiency) for CW operation at 6 GHz. When the PA is driven with 5/10/20 MHz LTE 16QAM modulated signals, the simulated output spectra and adjacent channel leakage ratio (ACLR) at 4 dB below Pout, 1db passed the LTE spectrum emission mask (SEM) without any predistortion. Operated at a 28 V supply, this fully monolithic PA achieves reasonable frequency performance and linearity while it did not adopt the Doherty architecture for backoff efficiency enhancement; however, simulations suggest it may deliver good PAE values at power backoff when supply modulation is used to make it competitive for 5G PA microcell applications.
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