Floating-Gate MOS charge programming using pulsed hot-electron injection

Abstract

The Floating-Gate MOSFET is a device which has many applications in the design of analog circuits. One drawback of its properties is the parasitic charge associated with its floating gate, usually present after the fabrication. Depending on the application, this charge needs to be removed or modified. This paper describes an algorithm and a prototype system which uses Fowler-Nordheim Tunneling and Hot-Electron Injection in a pulsed fashion in order to clear or modify the floating-gate charge.