Application of Workfunction Engineering in Lateral Power Devices

Abstract

A novel Lateral Single Diffused Metal-Oxide-Semiconductor (LSDMOS) is proposed in this paper. In this design, workfunction engineering is applied in lateral power device causing plasma formation at metal-semiconductor interface forming source and drain region. The device is simulated in 2-D device simulator and electrical characteristics of the proposed device are compared with the conventional device. Proposed device exhibit enhanced electrical characteristics with drain current density twice of the conventional device. As high drain current flows less number of cells will be required for any circuit application.