Resistive Switching Driven by Electric Field in the Mott Insulators AM4X8 (A = Ga, Ge; M= V, Nb, Ta; X = S, Se): Towards a New Class of Non-Volatile RRAM Memory
E. Souchier, C. Vâju, V. Guiot, B. Corraze, E. Janod, J. Tranchant, P. Mazoyer, M. Besland, L. Cario
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