{"title":"Industrial MHEMT Technologies for 80 - 220 GHz Applications","authors":"D. Smith, G. Dambrine, J. Orlhac","doi":"10.1109/EMICC.2008.4772267","DOIUrl":null,"url":null,"abstract":"This paper describes the industrial development methodology of a family of MHEMT technologies with gate lengths from 130 down to 50 nm. State of the art MMIC LNA performance for the commercial 70 nm technology at 90 and 150 GHz is presented.","PeriodicalId":344657,"journal":{"name":"2008 European Microwave Integrated Circuit Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 European Microwave Integrated Circuit Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2008.4772267","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15
Abstract
This paper describes the industrial development methodology of a family of MHEMT technologies with gate lengths from 130 down to 50 nm. State of the art MMIC LNA performance for the commercial 70 nm technology at 90 and 150 GHz is presented.
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