The MOSFET Virtual Organisation: Grid Computing for Simulation in Nanoelectronics

R. Ferreiro, N. Seoane, M. Aldegunde, A. García-Loureiro
{"title":"The MOSFET Virtual Organisation: Grid Computing for Simulation in Nanoelectronics","authors":"R. Ferreiro, N. Seoane, M. Aldegunde, A. García-Loureiro","doi":"10.1109/e-Science.2009.45","DOIUrl":null,"url":null,"abstract":"The next substitution of the XDEnabling Grids for E-sciencE project (EGEE) in 2010 by the European Grid Initiative (EGI), where grid infrastructure of each country will be run by National Grid Initiatives (NGI), is giving a boost to the NGI development. In this context, the Spanish National Grid Initiative (es-NGI) is being developed by the escience Spanish network. The es-NGI is developing virtual organizations where common area applications are associated. In this context, the MOSFET virtual organisation (VO-MOSFET) was born in 2009 to perform semiconductor device simulations using the es-NGI infrastructure. This virtual organization is supported by the es-NGI resource centres and it is developing a job submission and monitoring system independent of the grid middleware. In this paper a general description of the VO-MOSFET and some application level utilities of the job submission system are presented. Furthermore, a gridification example of a nanoelectronic simulation is presented proving the grid benefits for the field of nanoelectronic simulation.","PeriodicalId":325840,"journal":{"name":"2009 Fifth IEEE International Conference on e-Science","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2009-12-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 Fifth IEEE International Conference on e-Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/e-Science.2009.45","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

The next substitution of the XDEnabling Grids for E-sciencE project (EGEE) in 2010 by the European Grid Initiative (EGI), where grid infrastructure of each country will be run by National Grid Initiatives (NGI), is giving a boost to the NGI development. In this context, the Spanish National Grid Initiative (es-NGI) is being developed by the escience Spanish network. The es-NGI is developing virtual organizations where common area applications are associated. In this context, the MOSFET virtual organisation (VO-MOSFET) was born in 2009 to perform semiconductor device simulations using the es-NGI infrastructure. This virtual organization is supported by the es-NGI resource centres and it is developing a job submission and monitoring system independent of the grid middleware. In this paper a general description of the VO-MOSFET and some application level utilities of the job submission system are presented. Furthermore, a gridification example of a nanoelectronic simulation is presented proving the grid benefits for the field of nanoelectronic simulation.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
MOSFET虚拟组织:纳米电子学模拟的网格计算
2010年,欧洲电网计划(EGI)将取代XDEnabling Grid for E-sciencE项目(EGEE),其中每个国家的电网基础设施将由国家电网计划(NGI)运营,这将推动NGI的发展。在这种背景下,西班牙国家电网倡议(es-NGI)正在由escience西班牙网络开发。es-NGI正在开发虚拟组织,其中公共区域应用程序相关联。在这种背景下,MOSFET虚拟组织(VO-MOSFET)于2009年诞生,用于使用es-NGI基础架构执行半导体器件模拟。这个虚拟组织得到es-NGI资源中心的支持,它正在开发一个独立于网格中间件的作业提交和监控系统。本文介绍了VO-MOSFET的总体结构和作业提交系统的一些应用层实用程序。最后,给出了一个纳米电子仿真的网格化实例,证明了网格化在纳米电子仿真领域的优势。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A Methodology for File Relationship Discovery A Protocol for Exchanging Scientific Citations Enabling Computational Steering with an Asynchronous-Iterative Computation Framework Topic Maps in the eHumanities Comparing METS and OAI-ORE for Encapsulating Scientific Data Products: A Protein Crystallography Case Study
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1