Transmission Gate-Based 8T SRAM Cell for Biomedical Applications

Valluri Aswini, Sarada Musala, Avireni Srinivasulu
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引用次数: 3

Abstract

There is an immense necessity of several kB of embedded memory for Biomedical systems which typically operate in the sub-threshold domain with perfect efficiency. SRAMs dominates the total power consumption and the overall silicon area, as 70% of the die has been occupied by them. This brief proposes the design of a Transmission gate based SRAM cell for Biomedical applications eliminating the use of peripheral circuitry during the read operation. This topology offers smaller area, reduced delay, low power consumption and improved data stability in the read operation. The cell is implemented in 45nm CMOS technology operated at 0.45 V.
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生物医学应用中基于传输门的8T SRAM单元
生物医学系统通常在亚阈值域以完美的效率运行,因此非常需要几kB的嵌入式内存。sram占据了总功耗和整体硅面积,因为70%的芯片被它们占据。本简报提出了一种基于传输门的SRAM单元的设计,用于生物医学应用,消除了读取操作期间外围电路的使用。这种拓扑结构在读取操作中具有更小的面积、更低的延迟、更低的功耗和更高的数据稳定性。该电池采用45纳米CMOS技术,工作电压为0.45 V。
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