Alessandro Fumarola, P. Narayanan, Lucas L. Sanches, Severin Sidler, Junwoo Jang, Kibong Moon, R. Shelby, H. Hwang, G. Burr
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引用次数: 29
Abstract
Large arrays of the same nonvolatile memories (NVM) being developed for Storage-Class Memory (SCM) - such as Phase Change Memory (PCM) and Resistance RAM (ReRAM) - can also be used in non-Von Neumann neuromorphic computational schemes, with device conductance serving as synaptic “weight.” This allows the all-important multiply-accumulate operation within these algorithms to be performed efficiently at the weight data.
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