A. Grier, A. Valavanis, C. Edmunds, J. Shao, J. Cooper, G. Gardner, M. J. Mantra, O. Malis, D. Indjin, Z. Ikonić, P. Harrison
{"title":"Design considerations for GaN/AlN based unipolar (opto-)electronic devices, and interface quality aspects","authors":"A. Grier, A. Valavanis, C. Edmunds, J. Shao, J. Cooper, G. Gardner, M. J. Mantra, O. Malis, D. Indjin, Z. Ikonić, P. Harrison","doi":"10.1109/PHOSST.2016.7548743","DOIUrl":null,"url":null,"abstract":"We describe the theoretical and experimental studies of GaN/AlGaN based resonant tunnelling diodes, and in particular analyse the effects and typical values of interface roughness, and then discuss the implications of these, realistic material quality parameters on performance of unipolar optoelectronic devices.","PeriodicalId":337671,"journal":{"name":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-08-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE Photonics Society Summer Topical Meeting Series (SUM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PHOSST.2016.7548743","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We describe the theoretical and experimental studies of GaN/AlGaN based resonant tunnelling diodes, and in particular analyse the effects and typical values of interface roughness, and then discuss the implications of these, realistic material quality parameters on performance of unipolar optoelectronic devices.
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