An Academic's Perspective on SiC Power Devices: Retrospection and Prognostication

B. Baliga
{"title":"An Academic's Perspective on SiC Power Devices: Retrospection and Prognostication","authors":"B. Baliga","doi":"10.1109/WiPDA56483.2022.9955259","DOIUrl":null,"url":null,"abstract":"The role of an academic in the area of SiC power devices can be categorized as: (1) Fundamental Theoretical Predictions; (2) Fundamental Scientific Knowledge; (3) Fundamental Device Structures; (4) Device Structural Innovations; (5) Device Physics and Analysis; and (6) Technology Feasibility Studies. This paper provides examples of these activities during my past 40 years of effort in this field as a retrospective. New prospective device ideas that will have a strong impact on power electronics in the future are then discussed.","PeriodicalId":410411,"journal":{"name":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WiPDA56483.2022.9955259","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

The role of an academic in the area of SiC power devices can be categorized as: (1) Fundamental Theoretical Predictions; (2) Fundamental Scientific Knowledge; (3) Fundamental Device Structures; (4) Device Structural Innovations; (5) Device Physics and Analysis; and (6) Technology Feasibility Studies. This paper provides examples of these activities during my past 40 years of effort in this field as a retrospective. New prospective device ideas that will have a strong impact on power electronics in the future are then discussed.
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一个学者对SiC功率器件的看法:回顾与展望
学者在SiC功率器件领域的作用可分为以下几个方面:(1)基本理论预测;(2)基础科学知识;(3)器件基本结构;(4)设备结构创新;(5)器件物理与分析;(六)技术可行性研究。本文提供了我过去40年在这一领域的工作中的这些活动的例子作为回顾。然后讨论了未来将对电力电子产生强烈影响的新的前瞻性设备想法。
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