InAs/In1-xGaxAs Composite Channel High Electron Mobility Transistors for High Speed Applications

2008 European Microwave Integrated Circuit Conference Pub Date : 2008-10-01 DOI:10.1109/EMICC.2008.4772263

E. Yi Chang, C. Kuo, H. Hsu, Chia-Yuan Chang

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引用次数: 6

Abstract

80-nm InAs channel HEMTs with different lattice matched sub-channels, In_0.53Ga_0.47As and In_0.7Ga_0.3As, have been fabricated. The device with InAs/In_0.7Ga_0.3As composite channel exhibits high drain current density (1101 mA/mm), and high transconductance (1605 mS/mm) at drain bias V_DS = 0.8 V. The high current gain cutoff frequency (f_t) of 360 GHz and maximum oscillation frequency (f_max) of 380 GHz of the device with InAs/In_0.7Ga_0.3As were obtained at V_DS = 0.7 V in comparison to the InAs/In_0.53Ga_0.47 As channel HEMTs with f_t = 310 and f_max = 330 GHz. This is due to the high electron mobility and electron confinement in the InAs/In_0.7Ga_0.3As channel. In addition, a low gate delay time 0.84 psec was obtained at V_DS = 0.5 V. The excellent performance of the InAs channel HEMTs demonstrated in this study shows great potential for high speed and very low power logic applications with the optimal design of In_0.7Ga_0.3As/InAs/In_0.7Ga_0.3As composite channel.

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用于高速应用的InAs/In1-xGaxAs复合通道高电子迁移率晶体管

制备了具有不同晶格匹配子通道In0.53Ga0.47As和In0.7Ga0.3As的80 nm InAs沟道hemt。具有InAs/In0.7Ga0.3As复合通道的器件在漏极偏置VDS = 0.8 V时具有高漏极电流密度(1101 mA/mm)和高跨导(1605 mS/mm)。与ft = 310和fmax = 330 GHz的InAs/In0.53Ga0.47 As通道hemt相比，在VDS = 0.7 V时，InAs/In0.7Ga0.3As器件的高电流增益截止频率(ft)为360 GHz，最大振荡频率(fmax)为380 GHz。这是由于InAs/In0.7Ga0.3As通道中的高电子迁移率和电子限制。此外，在VDS = 0.5 V时获得了低栅极延迟时间0.84 psec。通过优化设计In0.7Ga0.3As/InAs/In0.7Ga0.3As复合通道，本研究所展示的InAs通道hemt的优异性能显示了在高速和极低功耗逻辑应用中的巨大潜力。

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2008 European Microwave Integrated Circuit Conference

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