A D-Band Active Single Pole Double Throw Switch in 60-nm GaN/SiC Technology

Abstract

This paper presents an active single pole double throw switch (SPDT), with Gallium Nitride on Silicon Carbide (GaN/SiC) millimeter wave process, working in the D-Band (110-170 GHz) frequency range. A single branch of the switch consists of the combination of a shunt transistor and a common-source transistor, achieving low insertion loss in the transmission state as well as good isolation in the isolation state. The simulation results of the monolithic microwave integrated circuits (MMICs) SPDT switch demonstrate a minimum insertion loss of 0.64 dB with 3 dB bandwidths of 35 GHz. Within the 3 dB bandwidth the isolation of the switch is higher than 19.7 dB.