Switched-mode high-efficiency Ka-band MMIC power amplifier in GaAs pHEMT technology

R. Negra, W. Bachtold
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引用次数: 10

Abstract

A highly efficient monolithically integrated class-E power amplifier for the 22-25 GHz range is presented. The circuit is fabricated with a 0.12 /spl mu/m GaAs pHEMT process using coplanar waveguide technology. Careful selection and design of the load network is crucial for obtaining high efficiency. Measurement results show a peak power added efficiency of more than 42% at 23 GHz from a 2.2 V supply. To the authors' knowledge, this is the highest power added efficiency for class-E amplifiers at Ka-band reported up to date.
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GaAs pHEMT技术中开关模式高效ka波段MMIC功率放大器
提出了一种适用于22-25 GHz频段的高效单片集成e类功率放大器。该电路采用共面波导技术,采用0.12 /spl μ m GaAs pHEMT工艺制作。负荷网的合理选择和设计是保证电网高效运行的关键。测量结果表明,2.2 V电源在23 GHz时的峰值功率增加效率超过42%。据作者所知,这是迄今为止报道的ka波段e类放大器的最高功率附加效率。
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