{"title":"A monolithic double balanced mixer using passive GaAs MESFETs","authors":"T. Narhi","doi":"10.1109/MELCON.1989.50050","DOIUrl":null,"url":null,"abstract":"A monolithic double balanced mixer has been realized using 1- mu m GaAs technology. It utilizes the channel resistance of a MESFET operating in the linear region to produce a strong mixer with a high compression point and low intermodulation distortion. Conversion loss of 5.5 dB and an input third-order intercept point of 21 dBm have been measured.<<ETX>>","PeriodicalId":380214,"journal":{"name":"Proceedings. Electrotechnical Conference Integrating Research, Industry and Education in Energy and Communication Engineering',","volume":"83 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. Electrotechnical Conference Integrating Research, Industry and Education in Energy and Communication Engineering',","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MELCON.1989.50050","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
A monolithic double balanced mixer has been realized using 1- mu m GaAs technology. It utilizes the channel resistance of a MESFET operating in the linear region to produce a strong mixer with a high compression point and low intermodulation distortion. Conversion loss of 5.5 dB and an input third-order intercept point of 21 dBm have been measured.<>
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