Investigation of analog single event transient on low noise amplifier in X and Ka bands

Abstract

In this paper, we have analyzed the analog single event transient (ASET) performance of MOSFET based LNA circuits at two different frequencies (one in X band and another in Ka-band) to study the frequency dependency. The ASET impact is analyzed in the time and frequency domains under two scenarios, (i) absence of the RF input signal and (ii) the Presence of the RF input signal. In the first case, the collected charge (Qc) is taken as metric in the time domain and the second case, the spectrogram is used to analyze the disturbing presence in the fundamental frequency due to radiation strike. Based on the QC, the LNA used in X-band is more vulnerable compared to LNA used in Ka-band. The spectrogram results show that the LNA output spectrum in the X-band is disturbed more and stronger to the radiation strike compared to the LNA used in Ka-band.