The Fabrication and Testing of Optics for EUV Projection Lithography1,2

John S. Taylor, G. Sommargren, D. Sweeney, R. Hudyma, E. Gullikson
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Abstract

Extreme UltraViolet Lithography (EUVL) is a leading candidate as a stepper technology for fabricating the “0.1 µm generation” of microelectronic circuits. EUVL is an optical printing technique qualitatively similar to Deep UV Lithography (DUVL), except that 11-13nm wavelength light is used instead of 193-248nm. The feasibility of creating 0.1µm features has been well-established using small-field EUVL printing tools, and development efforts are currently underway to demonstrate that cost-effective production equipment can be engineered to perform full-width ring-field imaging consistent with high wafer throughput rates. Ensuring that an industrial supplier base will be available for key components and subsystems is crucial to the success of EUVL. In particular, the projection optics are the heart of the EUVL imaging system, yet they have figure and finish specifications that are beyond the state-of-the-art in optics manufacturing. Thus it is important to demonstrate that industry will be able to fabricate and certify these optics commensurate with EUVL requirements.
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EUV投影光刻光学器件的制备与测试[j], [j]
极紫外光刻(EUVL)是制造“0.1 μ m一代”微电子电路的步进技术的主要候选技术。EUVL是一种光学印刷技术,在质量上类似于深紫外光刻(DUVL),除了使用11-13nm波长的光而不是193-248nm。使用小视场EUVL打印工具创建0.1 μ m特征的可行性已经得到了证实,目前正在进行开发工作,以证明具有成本效益的生产设备可以设计成与高晶圆吞吐率一致的全宽环场成像。确保关键组件和子系统的工业供应商基础是EUVL成功的关键。特别是,投影光学是EUVL成像系统的核心,但它们的图形和完成规格超出了光学制造的最先进水平。因此,重要的是要证明,工业将能够制造和认证这些光学器件与EUVL的要求相称。
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