Submillimeter-Wave Schottky Diodes based on Heterogeneous Integration of GaAs onto Silicon

R. Weikle, Linli Xie, S. Nadri, M. Jafari, Christopher M. Moore, Naser Alijabbari, M. Cyberey, N. S. Barker, A. Lichtenberger, Charles L. Brown
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引用次数: 8

Abstract

This paper reports on the design and fabrication of quasi-vertical Schottky diodes for submillimeter-wave applications. Use of the diodes to implement an integrated 160 GHz frequency quadrupler are described.
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基于砷化镓在硅上非均匀集成的亚毫米波肖特基二极管
本文报道了用于亚毫米波应用的准垂直肖特基二极管的设计和制造。描述了使用二极管实现集成的160 GHz频率四倍器。
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