Improved DRAM Timing Bounds for Real-Time DRAM Controllers with Read/Write Bundling

L. Ecco, R. Ernst
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引用次数: 29

Abstract

As DRAMs become faster, the penalty to reverse the direction of their data buses increases. Yet, existing real-time memory controllers do not reorder read and write commands. Hence, timing bounds are computed by assuming an alternating pattern of reads and writes, thus accounting for several data bus direction reversals, consequently leading to suboptimal results. Therefore, in this paper, we propose a memory controller that reorders read and write commands, which minimizes reversals. Moreover, we prove through a detailed timing analysis that the effect of the reordering is bounded. Finally, we compare our approach analytically with a state-of-the-art real-time memory controller and show that our timing bounds are up to 27% better.
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基于读写绑定的实时DRAM控制器的改进DRAM时序限制
随着dram变得越来越快,改变其数据总线方向的代价也在增加。然而,现有的实时内存控制器不重新排序读和写命令。因此,通过假设读和写的交替模式来计算时序边界,从而考虑到几个数据总线方向反转,从而导致次优结果。因此,在本文中,我们提出了一种内存控制器,它可以重新排序读写命令,从而最大限度地减少反转。此外,我们还通过详细的时序分析证明了重排序的影响是有界的。最后,我们将我们的方法与最先进的实时内存控制器进行了分析比较,并表明我们的时间界限提高了27%。
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