{"title":"Analysis of the electrical characteristics of novel ESD protection device with high holding voltage under various temperatures","authors":"Yong-Seo Koo, Hyun Duck Lee, J. Won, Yil Suk Yang","doi":"10.1109/IPEC.2010.5542284","DOIUrl":null,"url":null,"abstract":"The paper introduces a silicon controlled rectifier (SCR)-based device with high holding voltage for ESD power clamp. The holding voltage can be increased by extending a p+ cathode to the first n-well and adding second n-well wrapping around n+ cathode. The increase of the holding voltage above the supply voltage enables latch-up immune normal operation. The device is fabricated by 0.35um BCD (Bipolar-CMOS-DMOS) technology and investigated not only the electrical characteristics, but also temperature dependence of holding voltage/current in a wide temperature range from 300K to 500K. In the measurement result, the proposed device has holding voltage of 8V and second breakdown current of 80mA/um. At high temperature condition of above 400K, the holding voltage, holding current and second breakdown current of the proposed device rapidly decrease.","PeriodicalId":353540,"journal":{"name":"The 2010 International Power Electronics Conference - ECCE ASIA -","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The 2010 International Power Electronics Conference - ECCE ASIA -","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPEC.2010.5542284","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
The paper introduces a silicon controlled rectifier (SCR)-based device with high holding voltage for ESD power clamp. The holding voltage can be increased by extending a p+ cathode to the first n-well and adding second n-well wrapping around n+ cathode. The increase of the holding voltage above the supply voltage enables latch-up immune normal operation. The device is fabricated by 0.35um BCD (Bipolar-CMOS-DMOS) technology and investigated not only the electrical characteristics, but also temperature dependence of holding voltage/current in a wide temperature range from 300K to 500K. In the measurement result, the proposed device has holding voltage of 8V and second breakdown current of 80mA/um. At high temperature condition of above 400K, the holding voltage, holding current and second breakdown current of the proposed device rapidly decrease.
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