E. Aksen, W. van Noort, D. Bower, N. Bell, R. Dekker, W. de Boer, A. Rodriguez, P. Deixler, R. Havens, P. Magnée
{"title":"\"On-glass\" process option for BiCMOS technology","authors":"E. Aksen, W. van Noort, D. Bower, N. Bell, R. Dekker, W. de Boer, A. Rodriguez, P. Deixler, R. Havens, P. Magnée","doi":"10.1109/BIPOL.2004.1365747","DOIUrl":null,"url":null,"abstract":"An industrial SiGe BiCMOS technology is presented, in which the silicon substrate has been removed and replaced by a lossless glass substrate. This will enable the integration of better passives, while the active devices remain fully library compatible. Specifically, ideal NPN characteristics with 111/94 GHz f/sub T//f/sub max/ are shown without significant degradation of the thermal characteristics. This substrate transfer technology requires almost no changes to the standard processing and gives access to high-performance inverse NPN and vertical PNP devices, in addition to the lossless substrate.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"142 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2004.1365747","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
An industrial SiGe BiCMOS technology is presented, in which the silicon substrate has been removed and replaced by a lossless glass substrate. This will enable the integration of better passives, while the active devices remain fully library compatible. Specifically, ideal NPN characteristics with 111/94 GHz f/sub T//f/sub max/ are shown without significant degradation of the thermal characteristics. This substrate transfer technology requires almost no changes to the standard processing and gives access to high-performance inverse NPN and vertical PNP devices, in addition to the lossless substrate.
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