An ultra-broadband robust LNA for defence applications in AlGaN/GaN technology

Abstract

The design, fabrication and test of a 2–18 GHz monolithic Low Noise Amplifier utilizing 0.25 µm AlGaN/GaN HEMT technology is reported. The measured noise figure of the amplifier is less than 4.7dB over the 2 – 18 GHz frequency range, exhibiting a minimum of 3.3 dB at 3 GHz. The LNA gain is 23dB. Even being a low-noise amplifier, the MMIC can withstand 10W input CW RF power, demonstrating no apparent degradation: to the authors knowledge this is the best RF LNA survivability reported to date in this frequency range using GaN technology.