{"title":"TCAD-Based Analysis of Nanosheet and Forksheet FET Electrical Characteristics in the Presence of Gamma and Heavy Ion Radiation","authors":"Nischal Anand, Rohit Rai, Yashvi Verma, Amit Kumar Singh Chauhan, Deepak Kumar Sharma, Vivek Kumar","doi":"10.1109/ESDC56251.2023.10149855","DOIUrl":null,"url":null,"abstract":"In this article, we have studied the effects of gamma and heavy ion radiation on 5nm stacked nanosheet FET and Fork-sheet FET and analyzed the impact of radiation on circuitlevel characteristics. These analyses are carried out by using Three-Dimensional Technology Computer-Aided Design (3-D TCAD) simulations. By exposing gamma rays and heavy ion, the performance in terms of charge generation rate of nanosheet FET and Fork-sheet are investigated. Gamma particle and heavy-ion impacts are studied at the device and circuit levels. The results of Fork-sheet FET are compared with the results of gate-all-around nanosheet FET. After comparison, we found that radiation has a stronger influence on Fork-sheet than Nanosheet.","PeriodicalId":354855,"journal":{"name":"2023 11th International Symposium on Electronic Systems Devices and Computing (ESDC)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2023-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2023 11th International Symposium on Electronic Systems Devices and Computing (ESDC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESDC56251.2023.10149855","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this article, we have studied the effects of gamma and heavy ion radiation on 5nm stacked nanosheet FET and Fork-sheet FET and analyzed the impact of radiation on circuitlevel characteristics. These analyses are carried out by using Three-Dimensional Technology Computer-Aided Design (3-D TCAD) simulations. By exposing gamma rays and heavy ion, the performance in terms of charge generation rate of nanosheet FET and Fork-sheet are investigated. Gamma particle and heavy-ion impacts are studied at the device and circuit levels. The results of Fork-sheet FET are compared with the results of gate-all-around nanosheet FET. After comparison, we found that radiation has a stronger influence on Fork-sheet than Nanosheet.
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