M.T. Yang, D.C.W. Kuo, P. Ho, C. Kuo, T. Yeh, A. Chang, C.Y. Lee, Y. Chia, G. J. Chern, K.L. Young, D. Tang, J. Sun
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引用次数: 5
Abstract
Multiple variants of SiGe HBTs, using selected collector implants, suitable for wired and wireless applications were explored. The RF/analog characteristics of HBTs featured with fT/BV/sub CEO/ values of 130 GHz/2.3 V, 80 GHz/3.4 V and 60 GHz/ 4.8 V were characterized. The dependence of bias, temperature, frequency, noise, power, and geometry were investigated to provide designers with appropriate performance-breakdown design coverage and flexibility.
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