A New Placement Algorithm for Reduction of Soft Errors in Macrocell Based Design of Nanometer Circuits

K. Bhattacharya, N. Ranganathan
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引用次数: 6

Abstract

The rates of transient faults such as soft errors have been significantly impacted due to the aggressive scaling trends in the nanometer regime. In the past, several circuit optimization techniques have been proposed for preventing soft errors in logic circuits. These approaches include, inclusion of concurrent error detection circuits on selective nodes, selective gate sizing, dual-VDD assignment and selective node hardening at the transistor level. However, we show in this paper that larger wirelengths for nets can act as larger RC ladders and can effectively filter out the transient glitches due to radiation strikes. Based on this, we propose a simulated annealing based placement algorithm that significantly reduces the SER of logic circuits. We accurately capture the soft error masking effects by using a new metric called the {\em logical observability}. The cost function for simulated annealing is modeled as the summation of the logical observability weighted with the netlength for each net, while simultaneously constraining the total area and the total wirelength. The algorithm tries to assign higher wirelengths for nets with low masking probability for higher glitch reduction, while maintaining low delay and area penalty for the overall circuit. Each placement configuration is represented as a sequence pair and the moves in the space of sequence pairs are probabilistically accepted depending upon the cost gradient and the iteration count. Higher cost moves have a higher probability of acceptance at initial iterations for better state space exploration, while at later iterations the algorithm greedily tries to minimize the cost. To the best of our knowledge, this is the first time that soft error rate reduction is attempted during the placement stage. The proposed algorithm has been implemented and validated on the ISCAS85 benchmarks. We have experimented using the FreePDK 45nm Process Design Kit and the OSU cell library which indicate that our radiation immune placement algorithm can significantly reduce the SER in logic circuits with very low overheads in delay and area.
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基于宏单元的纳米电路设计中减小软误差的新布局算法
由于纳米范围内的严重结垢趋势,软错误等瞬态故障的发生率受到了显著的影响。在过去,已经提出了几种电路优化技术来防止逻辑电路中的软错误。这些方法包括,在选择节点上包含并发错误检测电路,选择栅极尺寸,双vdd分配和晶体管级别的选择节点硬化。然而,我们在本文中表明,较大的无线网络可以作为较大的RC梯子,可以有效地过滤掉由于辐射打击造成的瞬态故障。基于此,我们提出了一种基于模拟退火的布局算法,可以显著降低逻辑电路的SER。我们通过使用一种称为{\em逻辑可观察性}的新度量来准确捕获软错误掩蔽效应。模拟退火的代价函数建模为每个网络的逻辑可观察性与网长加权的总和,同时约束了总面积和总长度。该算法尝试为低掩蔽概率的网络分配更高的波长,以获得更高的小故障减少,同时保持整个电路的低延迟和面积惩罚。每个放置配置被表示为一个序列对,序列对空间中的移动概率取决于代价梯度和迭代计数。为了更好地探索状态空间,在初始迭代中,成本较高的移动有更高的接受概率,而在随后的迭代中,算法会贪婪地尝试最小化成本。据我们所知,这是第一次在放置阶段尝试降低软错误率。该算法已在ISCAS85基准测试中得到了实现和验证。我们使用FreePDK 45nm工艺设计套件和OSU细胞库进行了实验,结果表明我们的辐射免疫放置算法可以显著降低逻辑电路中的SER,并且延迟和面积开销非常低。
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