M. Bawedin, S. Cristoloveanu, V. Dessard, Denis Flandre
{"title":"Experiments and Modeling of Dynamic Floating Body Effects in 1T-Dram Fully Depleted SOI Devices","authors":"M. Bawedin, S. Cristoloveanu, V. Dessard, Denis Flandre","doi":"10.1109/MIXDES.2007.4286125","DOIUrl":null,"url":null,"abstract":"We describe the transient floating-body mechanism which occurs in fully depleted SOI transistors and leads to a memory effect. A physics-based model for the potential variation with time is proposed and validated by numerical simulations. This model reproduces and clarifies the operation of the novel capacitor-less MSDRAM, the properties of which are discussed.","PeriodicalId":310187,"journal":{"name":"2007 14th International Conference on Mixed Design of Integrated Circuits and Systems","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 14th International Conference on Mixed Design of Integrated Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIXDES.2007.4286125","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
We describe the transient floating-body mechanism which occurs in fully depleted SOI transistors and leads to a memory effect. A physics-based model for the potential variation with time is proposed and validated by numerical simulations. This model reproduces and clarifies the operation of the novel capacitor-less MSDRAM, the properties of which are discussed.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
