{"title":"Transport models for advanced device simulation-truth or consequences?","authors":"S. Laux, M. Fischetti","doi":"10.1109/BIPOL.1995.493859","DOIUrl":null,"url":null,"abstract":"An overview of three methods currently employed in advanced semiconductor device simulation is given, together with results for a model n/sup +/-n-n/sup +/ structure. The Monte Carlo, energy transport and spherical harmonic expansion methods are discussed from the perspective of a Monte Carlo enthusiast.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1995.493859","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15
Abstract
An overview of three methods currently employed in advanced semiconductor device simulation is given, together with results for a model n/sup +/-n-n/sup +/ structure. The Monte Carlo, energy transport and spherical harmonic expansion methods are discussed from the perspective of a Monte Carlo enthusiast.
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