{"title":"A compact class-AB bulk-driven quasi-floating gate current mirror for low voltage applications","authors":"A. Suadet, V. Kasemsuwan","doi":"10.1109/ISCIT.2013.6645868","DOIUrl":null,"url":null,"abstract":"A compact class-AB bulk-driven quasi-floating gate current mirror is proposed. The circuit is based on an active class-A current mirror using bulk-driven quasi-floating gate (BD-QFG) MOS transistors and low voltage bulk-input pseudo-differential amplifier. The circuit can operate from a supply voltage as low as VT+VDSAT. The performance of the circuit is verified by SPECTRE, using a standard 0.18 μm CMOS process with a 0.5 V supply voltage. The circuit demonstrates low input impedance (934 Ω) and relatively high output impedance (1.13 MΩ). The circuit can drive the output current 8 times larger than the quiescent current. The power dissipation under quiescent condition is 8.2 μW.","PeriodicalId":356009,"journal":{"name":"2013 13th International Symposium on Communications and Information Technologies (ISCIT)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 13th International Symposium on Communications and Information Technologies (ISCIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCIT.2013.6645868","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
A compact class-AB bulk-driven quasi-floating gate current mirror is proposed. The circuit is based on an active class-A current mirror using bulk-driven quasi-floating gate (BD-QFG) MOS transistors and low voltage bulk-input pseudo-differential amplifier. The circuit can operate from a supply voltage as low as VT+VDSAT. The performance of the circuit is verified by SPECTRE, using a standard 0.18 μm CMOS process with a 0.5 V supply voltage. The circuit demonstrates low input impedance (934 Ω) and relatively high output impedance (1.13 MΩ). The circuit can drive the output current 8 times larger than the quiescent current. The power dissipation under quiescent condition is 8.2 μW.
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