{"title":"Influence of microstrip line deformation on scattering matrix parameters in strain sensing applications","authors":"P. Lopato, Michal Herbko","doi":"10.1109/IIPHDW.2018.8388364","DOIUrl":null,"url":null,"abstract":"Feeding a microstrip stress sensor using a microstrip line is very common, due to simplicity, ease of production and integration with electronics. In this paper the influence of deformation on microstrip line (ML) feeding microwave strain sensor was studied. This analysis is important for the design and reliability of strain measurement using a microstrip sensor. Finite element method (FEM) was utilized to study this issue. Numerical model in Comsol Multiphysics environment was built and applied for analysis of scattering parameters S11 and S21 change caused by parallel and perpendicular deformation.","PeriodicalId":405270,"journal":{"name":"2018 International Interdisciplinary PhD Workshop (IIPhDW)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Interdisciplinary PhD Workshop (IIPhDW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIPHDW.2018.8388364","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Feeding a microstrip stress sensor using a microstrip line is very common, due to simplicity, ease of production and integration with electronics. In this paper the influence of deformation on microstrip line (ML) feeding microwave strain sensor was studied. This analysis is important for the design and reliability of strain measurement using a microstrip sensor. Finite element method (FEM) was utilized to study this issue. Numerical model in Comsol Multiphysics environment was built and applied for analysis of scattering parameters S11 and S21 change caused by parallel and perpendicular deformation.
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