P. Mancinelli, T. Heid, D. Fabiani, A. Saccani, M. Toselli, M. Frechette, S. Savoie, É. David
{"title":"Thermal in situ reduction of graphene oxide in epoxy-based nanodielectrics: Influence on dielectric properties","authors":"P. Mancinelli, T. Heid, D. Fabiani, A. Saccani, M. Toselli, M. Frechette, S. Savoie, É. David","doi":"10.1109/CEIDP.2013.6748226","DOIUrl":null,"url":null,"abstract":"Graphene oxide (GO) water solution has been added and mixed to epoxy resin. Water has been evaporated at low pressure and the resulting mixture has been cured through an amine. Heating GO-epoxy samples at 130°C in situ chemical reduction of GO has been carried out. Dielectric constant of these graphene-based samples shows an increase of more than 50% compared to neat epoxy even for 0.3 wt% of GO dispersed into the matrix. This procedure may open a new way on tuning electrical properties of insulating materials.","PeriodicalId":393969,"journal":{"name":"2013 Annual Report Conference on Electrical Insulation and Dielectric Phenomena","volume":"96 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 Annual Report Conference on Electrical Insulation and Dielectric Phenomena","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CEIDP.2013.6748226","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
Graphene oxide (GO) water solution has been added and mixed to epoxy resin. Water has been evaporated at low pressure and the resulting mixture has been cured through an amine. Heating GO-epoxy samples at 130°C in situ chemical reduction of GO has been carried out. Dielectric constant of these graphene-based samples shows an increase of more than 50% compared to neat epoxy even for 0.3 wt% of GO dispersed into the matrix. This procedure may open a new way on tuning electrical properties of insulating materials.