S. Marcinkevičius, Rintat Yapparov, L. Kuritzky, S. Nakamura, J. Speck
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Abstract
Interwell carrier transport, important for efficient LED and laser diode operation, was studied in InGaN multiple quantum wells by time-resolved photoluminescence. A strong increase in transport efficiency was achieved in structures in which GaN barriers were replaced with that of InGaN.
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