C. Caramel, P. Austin, J. Sanchez, E. Imbernon, M. Breil
{"title":"Short-circuit protection structure for insulated gate power devices","authors":"C. Caramel, P. Austin, J. Sanchez, E. Imbernon, M. Breil","doi":"10.1109/BIPOL.2004.1365804","DOIUrl":null,"url":null,"abstract":"In this paper, we present a new integrated structure which can protect insulated gate power devices (lGBT, MMOS, EST, ... ) from short-circuit operating mode. This strnctnre is built with an anode voltage sensor, a delay LDMOS transistor, a LDMOS transistor allowing the power device gate unload and a Zener diode. It is notable that this protection structure is fully compatible with a power device technological process. The operating mode and the flrst optimization of the protection structure are presented. For this, IGBT is used as test device. 2D simulations are performed with ISE TCAD. First experimental results of the anode voltage sensor are given and compared with simulation results.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"90 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2004.1365804","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
In this paper, we present a new integrated structure which can protect insulated gate power devices (lGBT, MMOS, EST, ... ) from short-circuit operating mode. This strnctnre is built with an anode voltage sensor, a delay LDMOS transistor, a LDMOS transistor allowing the power device gate unload and a Zener diode. It is notable that this protection structure is fully compatible with a power device technological process. The operating mode and the flrst optimization of the protection structure are presented. For this, IGBT is used as test device. 2D simulations are performed with ISE TCAD. First experimental results of the anode voltage sensor are given and compared with simulation results.
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