Evan D. Chansky, Thomas P. Dorch, Aaron Maharry, R. Shafiiha, Guomin Yu, A. Zilkie, S. Estrella, L. Coldren, C. Schow
{"title":"High-Speed SiGe EAMs at Cryogenic Temperatures","authors":"Evan D. Chansky, Thomas P. Dorch, Aaron Maharry, R. Shafiiha, Guomin Yu, A. Zilkie, S. Estrella, L. Coldren, C. Schow","doi":"10.1109/IPC53466.2022.9975738","DOIUrl":null,"url":null,"abstract":"Electro-optic modulators capable of operating at cryogenic temperatures are of interest to a host of sensing, quantum, and supercomputing applications. Silicon photonics is compelling for its low cost and CMOS compatibility, but conventional tuning mechanisms are impacted at low temperatures. Bulk electro-absorption modulators are appealing since only the wavelength of the absorption band edge varies with temperature. Cryogenic effects on a fabricated high-speed modulator are shown, with consistent extinction ratio from 5-300K. (Abstract)","PeriodicalId":202839,"journal":{"name":"2022 IEEE Photonics Conference (IPC)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Photonics Conference (IPC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPC53466.2022.9975738","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Electro-optic modulators capable of operating at cryogenic temperatures are of interest to a host of sensing, quantum, and supercomputing applications. Silicon photonics is compelling for its low cost and CMOS compatibility, but conventional tuning mechanisms are impacted at low temperatures. Bulk electro-absorption modulators are appealing since only the wavelength of the absorption band edge varies with temperature. Cryogenic effects on a fabricated high-speed modulator are shown, with consistent extinction ratio from 5-300K. (Abstract)
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