C. McAndrew, J. Seitchik, D. Bowers, M. Dunn, M. Foisy, I. Getreu, M. McSwain, S. Moinian, J. Parker, P. van Wijnen, L. Wagner
{"title":"VBIC95: An improved vertical, IC bipolar transistor model","authors":"C. McAndrew, J. Seitchik, D. Bowers, M. Dunn, M. Foisy, I. Getreu, M. McSwain, S. Moinian, J. Parker, P. van Wijnen, L. Wagner","doi":"10.1109/BIPOL.1995.493891","DOIUrl":null,"url":null,"abstract":"This paper presents a vertical BJT model developed by IC and CAD industry representatives as a replacement for the SPICE Gummel-Poon model. VBIC95 includes improved modeling of the Early effect (output conductance), substrate current, quasi-saturation, and behavior over temperature.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"80 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"53","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1995.493891","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 53
Abstract
This paper presents a vertical BJT model developed by IC and CAD industry representatives as a replacement for the SPICE Gummel-Poon model. VBIC95 includes improved modeling of the Early effect (output conductance), substrate current, quasi-saturation, and behavior over temperature.
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