Investigations Properties of Selected Methods of Measurements of Thermal Parameters of the IGBT

Abstract

In this paper usefulness of electric and optical measurement methods to determine reliably values of thermal parameters of the IGBT is analysed. Factors influencing a measuring error of the considered methods are discussed. The results of measurements of the considered parameters obtained with the use of the considered methods for different cooling conditions of the tested transistor are presented and discussed. It is shown, in what operating conditions each measuring method makes it possible to obtain reliable results.