{"title":"High frequency bipolar - JFET - I2L process","authors":"S. Lui, R. Meyer","doi":"10.1109/IEDM.1980.189844","DOIUrl":null,"url":null,"abstract":"A new monolithic process is described which allows simultaneous fabrication of high-speed (f<inf>T</inf>=400 MHz) JFETs, high-frequency (f<inf>T</inf>=4 GHz) bi-polar transistors plus I<sup>2</sup>L logic (t<inf>d</inf>=14 ns). The process incorporates an ion-implanted JFET structure with independently contacted gates and a bi-polar transistor with implanted base and emitter.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1980 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1980.189844","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A new monolithic process is described which allows simultaneous fabrication of high-speed (fT=400 MHz) JFETs, high-frequency (fT=4 GHz) bi-polar transistors plus I2L logic (td=14 ns). The process incorporates an ion-implanted JFET structure with independently contacted gates and a bi-polar transistor with implanted base and emitter.
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