Modeling of graphene/SiO2/Si(n) based metal-insulator-semiconductor solar cells

Muhammad Johirul Islam, Md. Mahmudul Hasan, Rifat Sami, Md. Iqbal Bahar Chowdhury
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Abstract

In this work a graphene based MIS structure for solar energy conversion has been modeled and analyzed. The MIS structure is formed by inserting an oxide layer in the conventional graphene/n-Si Schottky structure to obtain improved performance. Simulation of the model for this MIS structure shows this performance improvement. Using the simulation results this work also analyzes the effects of semiconductor layer width and semiconductor doping level on the current-voltage characteristics.
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石墨烯/SiO2/Si(n)基金属-绝缘体-半导体太阳能电池的建模
在这项工作中,基于石墨烯的太阳能转换MIS结构进行了建模和分析。MIS结构是通过在传统的石墨烯/n-Si肖特基结构中插入氧化层来形成的,以获得更好的性能。对该MIS结构模型的仿真表明了这种性能改进。利用仿真结果分析了半导体层宽度和掺杂水平对电流-电压特性的影响。
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