Shu-rui Cao, Qingkui Yu, He Wang, Yi Sun, He Lv, B. Mei, Morigen, Pengwei Li, Hongwei Zhang, M. Tang
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引用次数: 2
Abstract
Silicon Carbide (SiC) Junction Barrier Schottky Diodes (JBS Diodes) were exposed to 50MeV and 90MeV protons up to a fluence of $5\times 10^{10}\text{cm}^{-2}$. During irradiation, the reverse leakage current decreased with the accumulation of fluence and no SEB occurred. By comparing the electrical characteristics before and after irradiation, it was analyzed that leakage current decreasing was related to the increase of barrier height and the reduction of carrier concentration. It was considered that no SEB occurring was associated with the lower proton fluence and biased voltage.
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