A Feedback GaN HEMT Oscillator

Abstract

This letter studies a feedback GaN HEMT oscillator implemented with the WIN $0.255{\mu m}$ GaN HEMT technology. The oscillator consists of a HEMT amplifier with an LC feedback network. With the supply voltage of $\text{V}_{\text{DD}} =1.8\ \text{V}$, the GaN VCO current and power consumption of the oscillator are 10.18 mA and 18.33mW, respectively. The oscillator can generate single-ended signal at 7.26GHz and it also supplies output power 1.06 dBm. At 1MHz frequency offset from the carrier the phase noise is −122.48 dBc/Hz. The die area of the GaN HEMT oscillator is $2\times 1\ \text{mm}^{2}$.