Ka-Band Wide-Bandwidth Voltage-Controlled Oscillators in InGaP-GaAs HBT Technology

Chau-Ching Chiong, Hong-Yeh Chang, Ming-Tang Chen
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引用次数: 5

Abstract

Monolithic wide-bandwidth low-phase-noise voltage-controlled oscillators (VCOs) using 2-mum InGaP-GaAs heterojunction bipolar transistor (HBT) technology are presented in the paper. The tuning range of the VCOs are 28.0 to 34.0 GHz and 33.8 to 39.1 GHz, with a phase noise of -100.7 and -103.8 dBc/Hz at 1-MHz offset from the carrier. The overall dc power consumption of the differential-output VCOs is 85 mW with a supply voltage of -2.5 V. The VCOs feature wide tuning range and low phase noise at the same time, with a figure of merit (FOM) of -176 and -171 dB. These are the first Ka-band VCOs with wide tuning bandwidth using commercial GaAs HBT process.
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InGaP-GaAs HBT技术中的ka波段宽带压控振荡器
提出了一种采用2 μ m InGaP-GaAs异质结双极晶体管技术的单片宽带宽低相位噪声压控振荡器(vco)。vco的调谐范围分别为28.0 ~ 34.0 GHz和33.8 ~ 39.1 GHz,在载波偏移1 mhz时相位噪声分别为-100.7和-103.8 dBc/Hz。差分输出压控振荡器的总体直流功耗为85 mW,电源电压为-2.5 V。vco具有宽调谐范围和低相位噪声的特点,同时具有-176和-171 dB的优值(FOM)。这是第一个使用商用GaAs HBT工艺具有宽调谐带宽的ka波段vco。
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