MOLECULAR ORIENTATION AND ENERGY LEVEL ALIGNMENT AT THE CuPc/SAMs INTERFACE

Wei Chen, Shi Chen, D. Qi, Xingyu Gao, A. Wee
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Abstract

This article highlights recent progress in the use of functionalized self-assembled monolayers for organic electronics, with particular emphasis on the investigation of the CuPc-SAMs interface properties, particularly the energy level alignment and molecular orientation. Synchrotron-based high-resolution photoemission spectroscopy (PES) and near-edge X-ray absorption fine structure measurements (NEXAFS) are used to address these issues. It is found that the energy level alignment at the CuPc-SAMs interface depends on the chain length of SAMs. Fermi level pinning occurs at the interface of CuPc with short chain SAMs of 4-trifluoromethyl-benzenethiol (CF3-SAM) and 4-methyl-benzenethiol (CH3-SAM), whereas the vacuum level aligns at the interface of CuPc with long chain SAMs including 1-(p-thiophenyl)-4-phenylbenzene (BBB), 4-(p-thiophenyl)-2, 2', 5, 5'-tetramethoxy-biphenyl (BOO), 1-(p-thiophenyl)-4-(2', 5'-dimethoxyphenyl)-tetrafluorobenzene (BFO) and 4-pentafluorophenyl-1-(p-thiophenyl)-2, 5-dimethoxybenzene (BOF). A significant reduction of the hole injection barrier (Δh) by up to 0.75 eV was observed after deposition of 5 nm CuPc on BOF/Au(111) as compared to the CuPc/Au(111) (Δh = 0.9 eV). Angular-dependent NEXAFS measurements reveal that CuPc molecules adopt a standing up configuration on all SAMs. This suggests that the interface charge transfer has negligible effect on the molecular orientation of CuPc on various SAMs.
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CuPc/SAMs界面的分子取向和能级排列
本文重点介绍了功能化自组装单层膜在有机电子领域的最新进展,重点介绍了自组装单层膜的界面性质,特别是能级排列和分子取向的研究。基于同步加速器的高分辨率光电发射光谱(PES)和近边缘x射线吸收精细结构测量(NEXAFS)用于解决这些问题。研究发现,在cu - cu - sam界面上的能级排列取决于sam的链长。费米能级钉发生在与短链CuPc地对空导弹的接口4-trifluoromethyl-benzenethiol (CF3-SAM)和4-methyl-benzenethiol (CH3-SAM),而接口的真空水平对齐CuPc与长链地空导弹包括1 - (p-thiophenyl) 4-phenylbenzene (BBB), 4 - (p-thiophenyl) 2、2’,5、5 ' -tetramethoxy-biphenyl(嘘),1 - (p-thiophenyl) 4 - (2 ', 5 ' -dimethoxyphenyl) -tetrafluorobenzene(拍频振荡器)和4-pentafluorophenyl-1——(p-thiophenyl) 2、5-dimethoxybenzene(转炉)。与CuPc/Au(111) (Δh = 0.9 eV)相比,在BOF/Au(111)上沉积5 nm CuPc后,观察到空穴注入势垒(Δh)显著降低了0.75 eV。依赖于角度的NEXAFS测量表明,CuPc分子在所有sam上都采用直立构型。这表明,界面电荷转移对cu在不同的sam上的分子取向的影响可以忽略不计。
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