Charge transport in silicon nitride/silicon oxide double layers

Abstract

Charge transport was studied in double layers of 150 nm silicon nitride and 300 nm silicon oxide on silicon substrate by determining the location of the charge centroid (mean charge depth) with a new method based on the evaluation of capacitance-voltage data in conjunction with surface potential measurements. The samples were charged at room temperature on their open nitride surface to potentials of about 100 V with a corona process. Measurements of the location of the charge centroid were performed after annealing periods at temperatures up to 600/spl deg/C. The results show that positive charge is relatively immobile at the nitride surface at temperatures up to 200/spl deg/C; at 400/spl deg/C, it drifts through the nitride within hours to be trapped at the nitride/oxide interface. The charge is released from these traps at about 500/spl deg/C when it drifts to the substrate. Negative charge is also immobile at 200/spl deg/C but drifts at 400/spl deg/C through the entire double layer.