Calculation of photosensitivity of porous silicon for optoelectronic devices

Abstract

It has been developed a new theoretical model for the photosensitivity of porous silicon which takes into account the recombination of photocarriers at the surfaces of spherical pores. An expression for the semiconductor photoconductivity has been derived under assumption of uniform generation of photocarriers and diffusion character of their movement. The photosensitivity of porous silicon has been shown to strongly depend on the velocity of photocarriers recombination at the pore's surfaces, radius of pores and average distance between pores.