An analytical approach to efficient circuit variability analysis in scaled CMOS design

Samatha Gummalla, Anupama R. Subramaniam, Yu Cao, C. Chakrabarti
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引用次数: 20

Abstract

CMOS scaling has led to increasingly high variability in device and circuit performance. To improve design robustness, it is important to consider variation in the design flow. In this paper a closed-form solution is proposed to predict the variability in gate timing, which significantly reduces computation cost in statistical analysis. The proposed model covers both nominal delay and its variability across a wide range of device sizes, load capacitances and input transition times. Stack effect, such as that in NAND and NOR gates, is taken into account thereby making the model sensitive to the switching patterns. For ISCAS'85 benchmark circuits, implemented using a 45nm library, the model demonstrates high accuracy with less than 3.5% error for nominal delay and within 5ps variation of the critical path. Finally, use of the proposed model in design flow is demonstrated for setup time violations.
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一种有效的CMOS电路变异性分析方法
CMOS缩放导致器件和电路性能越来越高的可变性。为了提高设计的健壮性,考虑设计流程中的变化是很重要的。本文提出了一种预测门时序变异性的封闭解,大大降低了统计分析中的计算成本。所提出的模型涵盖了标称延迟及其在广泛的器件尺寸,负载电容和输入过渡时间范围内的可变性。考虑到NAND门和NOR门中的堆栈效应,从而使模型对开关模式敏感。对于使用45nm库实现的ISCAS’85基准电路,该模型具有较高的精度,标称延迟误差小于3.5%,关键路径变化在5ps以内。最后,演示了在设置时间冲突的设计流程中使用所提出的模型。
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