Active Gate Control for Current Balancing in Paralleled IGBT Modules in a Solid State Modulator

Abstract

Summary form only given. In the paper an active gate control for paralleled IGBTs in a solid state modulator is presented. There, the focus is put on the rising and falling edges and the overshoot which are very important for klystron applications. For controlling the current sharing and providing fast switching also a high dynamic gate drive is presented in the paper. There, a PCB integrated Rogowski current probe is used which has a high bandwidth and enables a low inductive construction required for the pulse modulator.