M. Sazzadur Rahman, M. Kibria, T. Nakagawa, S. Mizuno
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引用次数: 0
Abstract
The phase evolution of Si on Ni (111) was studied by LEED and AES. A new phase of Si on Ni (111) was found along with the previously reported (√3 × √3)R 30° phase. The surface structure of (√3 × √3)R 30° phase had determined, with chemical composition of Ni2Si, by using low-energy electron diffraction (LEED) analysis. The obtained nickel silicide would be helpful for understanding the formation of Schottky barrier at semiconductor-metal interface.
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