{"title":"The modeling and simulation of the frequency characteristics on deep-submicron fully depleted SOI BJMOSFET","authors":"Zhang Yan, Zeng Yun","doi":"10.1109/ISRA.2012.6219141","DOIUrl":null,"url":null,"abstract":"The high frequency model of deep-submicron fully depleted SOI BJMOSFET has been proposed theoretically and its frequency characteristics curves have been achieved by HSPICE software. Compared to deep-submicron fully depleted SOI MOSFET at the same condition, it's proved that the new-style SOI device has much better frequency characteristics and more rapid working speed. So it's a kind of new excellent SOI device.","PeriodicalId":266930,"journal":{"name":"2012 IEEE Symposium on Robotics and Applications (ISRA)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 IEEE Symposium on Robotics and Applications (ISRA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISRA.2012.6219141","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The high frequency model of deep-submicron fully depleted SOI BJMOSFET has been proposed theoretically and its frequency characteristics curves have been achieved by HSPICE software. Compared to deep-submicron fully depleted SOI MOSFET at the same condition, it's proved that the new-style SOI device has much better frequency characteristics and more rapid working speed. So it's a kind of new excellent SOI device.
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