Design of An Ultra Wideband Transmitter in 0.18μm 3D Silicon on Insulator CMOS

Z. Zhang, A. Andreou
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Abstract

The three-dimensional (3D) integration of silicon on insulator (SOI) wafers has provided us with a tremendous opportunity for ultra-high density, high performance and low-power integrated circuits. We present in this paper an ultra wideband transmitter fabricated in a fully depleted 3D SOI technology. It operates below 960 MHz with small ominidirectional antennas, such as a dipole.
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基于0.18μm三维硅绝缘体CMOS的超宽带发射机设计
绝缘体上硅(SOI)晶圆的三维(3D)集成为我们提供了超高密度、高性能和低功耗集成电路的巨大机会。本文提出了一种采用全耗尽3D SOI技术制造的超宽带发射机。它工作在960兆赫以下,使用小的双向天线,如偶极子。
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